inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 1 isc silicon npn power transistor 2SC3714 description high switching speed high collector-emitter breakdown voltage- : v (br)ceo = 400v(min) absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base v oltage 500 v v ceo collector-emitter v oltage 400 v v ebo emitter-base voltage 7 v i c collector current-continuous 20 a i cm collector current-pulse 40 a p c collector power dissipation @ t c =25 200 w t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn isc & iscsemi is registered trademark 2 isc silicon npn power transistor 2SC3714 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v ce (sat) collector-emitter saturation voltage i c = 10a; i b =2a 1.0 v v be (sat) base-emitter saturation voltage i c = 10a; i b =2a 1.5 v i cbo collector cutoff current v cb = 500v; i e = 0 100 a i ebo emitter cutoff current v eb = 6v; i c = 0 0.1 ma h fe-1 dc current gain i c = 10a; v ce = 2v 10 40 f t current-gainbandwidth product i c = 2a; v ce = 10v 20 mhz switching times t on turn-on time i c = 10a , i b1 = -i b2 = 2a r l = 15 ; v cc =150v,v bb2 =4v 0.5 s t stg storage time 2.0 s t f fall time 0.3 s
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